X-ray diffraction study of defect distribution in Czochralski grown silicon highly doped by As-Reference-Cited by-同舟云学术

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X-ray diffraction study of defect distribution in Czochralski grown silicon highly doped by As

Published:2005-05-06 Issue:10A Volume:38 Page:A111-A116
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Kyutt R N,Shulpina I L,Mosina G N,Ratnikov V V,Sorokin L M,Scheglov M P,Ruvimov S S,Kearns J,Todt V

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/38/i=10A/a=021/pdf

Reference27 articles.

1. The theory of diffuse X-ray scattering and its application to the study of point defects and their clusters

2. Diffuse Scattering from Defect Clusters near Bragg Reflections

3. Diffuse X-Ray Scattering in Fast-Neutron-Irradiated Copper Crystals

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Section Methods of X-Ray Diffraction Topography;Technical Physics;2023-12

2. Electrically Inactive Dopants in Heavily Doped As-Grown Czochralski Silicon;Solid State Phenomena;2015-10

3. Impact of heavy doping with donors on CZ silicon properties;Crystal Research and Technology;2014-02-18

4. X-ray study of dopant state in highly doped semiconductor single crystals;Semiconductor Physics Quantum Electronics and Optoelectronics;2011-02-28

5. The outlook for X-ray diffraction topography;Bulletin of the Russian Academy of Sciences: Physics;2010-11

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