Formation of Pd2Si on single-crystalline Si (100) at ultrafast heating rates: An in-situ analysis by nanocalorimetry-Reference-Cited by-同舟云学术

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Formation of Pd2Si on single-crystalline Si (100) at ultrafast heating rates: An in-situ analysis by nanocalorimetry

Published:2013-04-08 Issue:14 Volume:102 Page:143111
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Molina-Ruiz M.,Lopeandía A. F.,González-Silveira M.,Anahory Y.,Guihard M.,Garcia G.,Clavaguera-Mora M. T.,Schiettekatte F.,Rodríguez-Viejo J.

Funder

Spanish Ministry of Science and Innovation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4800934

Reference25 articles.

1. Formation kinetics and structure of Pd2Si films on Si

2. Structure and electrical characteristics of epitaxial palladium silicide contacts on single crystal silicon and diffused P-N diodes

3. Palladium silicide formation observed by Auger electron spectroscopy

4. The thermally-induced reaction of thin Ni films with Si: Effect of the substrate orientation

5. In situ combined synchrotron X-ray diffraction and wafer curvature measurements during formation of thin palladium silicide film on Si(001) and Si (111)

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