Optical absorption properties of Mg-doped GaN nanocolumns
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2133900
Reference22 articles.
1. High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures
2. AlxGa1−xN:Si Schottky barrier photodiodes with fast response and high detectivity
3. Low noisep-π-nGaN ultraviolet photodetectors
4. Visible-blind GaN Schottky barrier detectors grown on Si(111)
5. Highly sensitive ultraviolet photodetectors based on Mg-doped hydrogenated GaN films grown at 380 °C
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1. Exploring structural, electronic, magnetic, and optical response of GaN-X (X=Sr, ba, cs, mg) materials for optoelectronic applications;Physica B: Condensed Matter;2024-01
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3. p-Type Doping of GaN Nanowires Characterized by Photoelectrochemical Measurements;Nano Letters;2017-02-09
4. Highly polarized emission from a GaN-based ultraviolet light-emitting diode using a Si-subwavelength grating on a SiO2 underlayer;Optics Communications;2016-06
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