Influence of low-contrast subwavelength grating shape on polarization characteristics of GaN-based light-emitting diode emissions-Reference-Cited by-同舟云学术

Influence of low-contrast subwavelength grating shape on polarization characteristics of GaN-based light-emitting diode emissions

Published:2015-06-24 Issue:6 Volume:54 Page:067112
ISSN:0091-3286
Container-title:Optical Engineering
language:en
Short-container-title:Opt. Eng

Author:

Takashima Yuusuke¹,Shimizu Ryo¹,Haraguchi Masanobu²,Naoi Yoshiki²

Affiliation:

1. Tokushima University, Graduate School of Advanced Technology and Science, 2-1 Minami-josanjima, Tokushima 770-8506, Japan

2. Tokushima University, Graduate School of Advanced Technology and Science, 2-1 Minami-josanjima, Tokushima 770-8506, JapanbTokushima University, Institute of Technology and Science, 2-1 Minami-josanjima, Tokushima 770-8506, Japan

Publisher

SPIE-Intl Soc Optical Eng

Subject

General Engineering,Atomic and Molecular Physics, and Optics

Reference23 articles.

1. Wide-bandgap semiconductor materials: For their full bloom

2. Highly Polarized Green Light Emitting Diode inm-Axis GaInN/GaN

3. Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes

4. Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates

5. Polarized light emission from photonic crystal light-emitting diodes

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