Author:
Howling A. A.,Sansonnens L.,Ballutaud J.,Hollenstein Ch.,Schmitt J. P. M.
Subject
General Physics and Astronomy
Reference20 articles.
1. Deposition‐rate reduction through improper substrate‐to‐electrode attachment in very‐high‐frequency deposition ofa‐Si:H
2. Development of a numerical simulation tool to study uniformity of large area PECVD film processing
3. C. Hollenstein, A. A. Howling, C. Courteille, J.L. Dorier, L. Sansonnens, D. Magni, and H. Müller, in Amorphous and Microcrystalline Silicon Technology-1998, edited by S. Wagner, M. Hack, H. M. Branz, R. Schropp, and I. Schimizu, MRS Symposia Proceedings No. 507 (Materials Research Society, Pittsburgh, 1999), p. 547.
4. Amorphous silicon deposition: Industrial and technical challenges
5. J. P. M. Schmitt, in Amorphous Silicon Technology-1991, edited by A. Madan, Y. Hamakawa, M. Thompson, P. C. Taylor, and P. G. LeComber, MRS Symposia Proceedings No. 219 (Materials Research Society, Pittsburgh, 1991), p. 631.
Cited by
53 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献