Suppressing of island formation in surfactant‐controlled solid phase epitaxy of germanium on Si(100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108363
Reference20 articles.
1. Growth mechanism and clustering phenomena: The Ge-on-Si system
2. Heteroepitaxial growth of Ge films on the Si(100)‐2×1 surface
3. Temperature dependence of the Stranski-Krastanov layer thickness
4. The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)
5. Initial stage of heteroepitaxy of Ge on Si(111)-7 × 7 and (100)-2 × 1 surfaces studied by low-energy electron-loss spectroscopy (LEELS)
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