Al-Doped ZnO Transistors Processed from Solution at 120 °C-Reference-Cited by-同舟云学术

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Al-Doped ZnO Transistors Processed from Solution at 120 °C

Published:2016-04-08 Issue:6 Volume:2 Page:1600070
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Lin Yen-Hung¹,Thomas Stuart R.¹,Faber Hendrik¹,Li Ruipeng²,McLachlan Martyn A.³,Patsalas Panos A.⁴,Anthopoulos Thomas D.¹

Affiliation:

1. Department of Physics and Centre for Plastic Electronics; Blackett Laboratory; Imperial College London; London SW7 2AZ UK

2. Cornell High Energy Synchrotron Source; Cornell University; Ithaca NY 14850 USA

3. Department of Materials and Centre for Plastic Electronics; Imperial College London; London Royal School of Mines; London SW7 2AZ UK

4. Department of Physics; Laboratory of Applied Physics; Aristotle University of Thessaloniki; Thessaloniki 54124 Greece

Funder

Dutch Polymer Institute

European Research Council

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference67 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Solution-processable metal oxide semiconductors for thin-film transistor applications

3. High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

4. Indium Oxide Thin-Film Transistors Processed at Low Temperature via Ultrasonic Spray Pyrolysis

5. High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperatures

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1. Effect of annealing onto physical properties of Co:ZnO thin films prepared by spray pyrolysis technique;Physica Scripta;2023-08-29

2. Heterojunction Channel Engineering in Performance Enhancement of Solution-Processed Oxide Thin-Film Transistors;IEEE Transactions on Electron Devices;2023-06

3. Effect of Co doping onto physical properties of ZnO films and its UV detection performance;Journal of Materials Science: Materials in Electronics;2023-05

4. ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device;Sensors and Actuators A: Physical;2022-11

5. Significant performance and stability improvement of low-voltage InZnO thin-film transistors by slight La doping;Applied Physics Letters;2022-08-08

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