High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

Author:

Lin Yen-Hung12,Faber Hendrik1,Labram John G.1,Stratakis Emmanuel34,Sygellou Labrini5,Kymakis Emmanuel6,Hastas Nikolaos A.7,Li Ruipeng8,Zhao Kui9,Amassian Aram9,Treat Neil D.10,McLachlan Martyn10,Anthopoulos Thomas D.1

Affiliation:

1. Department of Physics and Centre for Plastic Electronics; Blackett Laboratory; Imperial College London; London SW7 2AZ UK

2. Dutch Polymer Institute (DPI); P.O. Box 902 5600 AX Eindhoven The Netherlands

3. Institute of Electronic Structure and Laser (IESL); Foundation for Research and Technology-Hellas (FORTH); Heraklion 71003 Greece

4. Materials Science & Technology Department; University of Crete; Heraklion 71003 Greece

5. Institute of Chemical Engineering and High Temperature Processes (ICEHT); Foundation of Research and Technology Hellas (FORTH); Stadiou Strasse Platani; P.O. Box 1414 Patras GR-265 04 Greece

6. Center of Materials Technology and Photonics and Electrical Engineering Department; Technological Educational Institute (TEI) of Crete; Heraklion 71004 Greece

7. Physics Department; Aristotle University of Thessaloniki; Thessaloniki 54124 Greece

8. Cornell High Energy Synchrotron Source; Wilson Laboratory; Cornell University; Ithaca NY 14853 USA

9. Materials Science and Engineering; Division of Physical Sciences and Engineering; King Abdullah University of Science and Technology; Thuwal 23955-6900 Saudi Arabia

10. Department of Materials and Centre for Plastic Electronics; Imperial College London; London Royal School of Mines; London SW7 2AZ UK

Funder

Dutch Polymer Institute (DPI) S-PLORE

European Research Council

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

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