Dislocation relaxation in InAsyP1−yfilms deposited onto (001) InP by gas‐source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110196
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1. Band-structure engineering for low-threshold high-efficiency semiconductor lasers
2. Strained-quantum-well, modulation-doped, field-effect transistor
3. Reduction of lasing threshold current density by the lowering of valence band effective mass
4. Electron mobility of indium arsenide phosphide [In(AsyP1−y)]
5. Structural and Optical Properties of Highly Strained InAs x P 1 − x / InP Heterostructures
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3. Strain relaxation properties of InAsyP1−y metamorphic materials grown on InP substrates;Journal of Applied Physics;2009-03-15
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