The effect of InP substrate misorientation on GaInAs‐AlInAs interface and alloy quality
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341482
Reference6 articles.
1. GaInAs‐AlInAs structures grown by molecular beam epitaxy
2. Role of kinetics and thermodynamics in alloy clustering and surface quality in InAlAs grown by molecular‐beam epitaxy: Consequences for optical and transport properties
3. Photoluminescence broadening mechanisms in high quality GaInAs‐AlInAs quantum well structures
4. Influence of an intentional substrate misorientation on deep electron traps in AlGaAs grown by molecular beam epitaxy
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