Strain and structural characterization of Zn1−xCdxSe laser structures grown on GaAs and InGaAs (001) substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362775
Reference32 articles.
1. Blue‐green laser diodes
2. Blue/greenpnjunction electroluminescence from ZnSe‐based multiple quantum‐well structures
3. Effect of lattice mismatch in ZnSe epilayers grown on GaAs by molecular beam epitaxy
4. Structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions
5. Depth profiling of elastic strains in lattice-mismatched semiconductor heterostructures and strained-layer superlattices
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural analysis of CdO layers grown on r-plane sapphire (011¯2) by metalorganic vapor-phase epitaxy;Journal of Crystal Growth;2004-10
2. Lattice curvature generation in gradedInxGa1−xAs/GaAsbuffer layers;Physical Review B;2000-10-15
3. Critical thickness and strain relaxation in lattice mismatched II–VI semiconductor layers;Journal of Applied Physics;1998-05
4. Transmission electron microscopy and cathodoluminescence studies of extended defects in electron-beam-pumped Zn1−xCdxSe/ZnSe blue-green lasers;Journal of Applied Physics;1998-02-15
5. Structural properties of homoepitaxial and heteroepitaxial ZnSe-based laser structures;Journal of Crystal Growth;1998-02
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