Structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions-Reference-Cited by-同舟云学术

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Structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions

Published:1994-08 Issue:5 Volume:65 Page:549-551
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Y.,Liu X.,Weber E.,Bourret E. D.,Liliental‐Weber Z.,Haller E. E.,Washburn J.,Olego D. J.,Dorman D. R.,Gaines J. M.,Tasker N. R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.112293

Reference8 articles.

1. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth

2. See special issue papers in J. Electron. Mater. 22 (1993), edited by R. L. Gunshor, H. Kukimoto, and R. P. Ruth.JECMA50361-5235

3. Structural properties of the ZnSe/GaAs system grown by molecular‐beam epitaxy

4. Growth mode and dislocation distribution in the ZnSe/GaAs (100) system

5. Structural quality and the growth mode in epitaxial ZnSe/GaAs(100)

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Asymmetric Dislocation Densities in Forward-Graded ZnS y Se1−y /GaAs (001) Heterostructures;Journal of Electronic Materials;2010-02-24

2. Observation of photoluminescence related to Lomer–Cottrell-like dislocations in ZnSe epilayers grown onin situcleaved (110)GaAs surfaces;Journal of Applied Physics;2005-01

3. Transmission electron microscopy study of crystal defects in ZnSe/GaAs(001) epilayers;Journal of Physics: Condensed Matter;2000-11-21

4. Anisotropic polarization of dislocation-related luminescence in thin ZnSe films;Physica B: Condensed Matter;1999-12

5. Optical and structural characterization of ZnSe films grown by molecular beam epitaxy on GaAs substrates with and without GaAs buffer layers;Journal of Applied Physics;1998-08

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