Lattice curvature generation in gradedInxGa1−xAs/GaAsbuffer layers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.11054/fulltext
Reference29 articles.
1. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates
2. Strain relaxation in graded composition InxGa1−xAs/GaAs buffer layers
3. Lattice curvature of InxGa1−xAs/GaAs [001] graded buffer layers
4. Crystallographic tilting of heteroepitaxial layers
5. Misorientation and tetragonal distortion in heteroepitaxial vapor-Grown III–V structures
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