Influence of the substrate orientation on the electrical and material properties of GaAs metal-oxide-semiconductor capacitors and self-aligned transistors using HfO2 and silicon interface passivation layer-Reference-Cited by-同舟云学术

Influence of the substrate orientation on the electrical and material properties of GaAs metal-oxide-semiconductor capacitors and self-aligned transistors using HfO2 and silicon interface passivation layer

Published:2008-05-19 Issue:20 Volume:92 Page:202908
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ok InJo,Kim H.,Zhang M.,Zhu F.,Park S.,Yum J.,Zhao H.,Garcia Domingo,Majhi Prashant,Lee Jack C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2917823

Reference16 articles.

1. Electronic passivation of GaAs surfaces through the formation of arsenic—sulfur bonds

2. Chemical and electrical characterization of Gd2O3∕GaAs interface improved by sulfur passivation

3. Structural, optical, and electrical properties of epitaxial chalcopyrite CuIn3Se5films

4. Unpinned GaAs MOS capacitors and transistors

5. MBE growth and applications of silicon interface control layers

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications;Current Opinion in Solid State and Materials Science;2011-10

2. Effects of Interface Al[sub 2]O[sub 3] Passivation Layer for High-k HfO[sub 2] on GaAs;Electrochemical and Solid-State Letters;2011

3. Impact of Semiconductor and Interface-State Capacitance on Metal/High-k/GaAs Capacitance–Voltage Characteristics;IEEE Transactions on Electron Devices;2010-10

4. Improved thermal stability of Al2O3/HfO2/Al2O3 high-k gate dielectric stack on GaAs;Applied Physics Letters;2010-04-05

5. Effect of Interface Oxidation on the Electrical Characteristics of HfO2/Ultrathin-Epitaxial-Ge/GaAs(100) Structures;Applied Physics Express;2010-02-19