MBE growth and applications of silicon interface control layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference42 articles.
1. GaAs and In0.53Ga0.47As MIS Structures Having an Ultrathin Pseudomorphic Interface Control Layer of Si Prepared by MBE
2. Unpinned GaAs MOS capacitors and transistors
3. Efficient operation of an Yb-sensitised Er fibre laser at 1.56 μm
4. Gate quality Si3N4/Si/n‐In0.53Ga0.47As metal‐insulator‐semiconductor capacitors
5. Si3N4/Si/n‐GaAs capacitor with minimum interface density in the 1010eV−1 cm−2range
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