Improved thermal stability of Al2O3/HfO2/Al2O3 high-k gate dielectric stack on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3377915
Reference14 articles.
1. Physical Limits in Semiconductor Electronics
2. Temperature effects of Si interface passivation layer deposition on high-k III-V metal-oxide-semiconductor characteristics
3. Inversion mode n-channel GaAs field effect transistor with high-k/metal gate
4. Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high-k gate dielectrics using x-ray photoelectron spectroscopy
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