Mercury annealing of reactive ion etching induced p- to n-type conversion in extrinsically doped p-type HgCdTe
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367389
Reference11 articles.
1. Use of low temperature to reduce intermixing at metal:HgCdTe contacts
2. Type conversion of p-(HgCd)Te using and Ar reactive ion etching
3. Ion implanted junction formation in Hg1−xCdxTe
4. Ion Implantation Study of HgCdTe
5. Determination of the migration energy of Hg interstitials in (HgCd)Te from ion milling experiments
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1. On the structural evolutionary behavior of the CdTe/HgCdTe interface during the annealing process;Journal of Materials Research and Technology;2024-01
2. A review on plasma-etch-process induced damage of HgCdTe;Infrared Physics & Technology;2018-05
3. Inductively Coupled Plasma-Induced Electrical Damage on HgCdTe Etched Surface at Cryogenic Temperatures;Journal of Electronic Materials;2018-03-12
4. Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies;Opto-Electronics Review;2017-06
5. Long-term stability of electron concentration in HgCdTe-based p – n junctions fabricated with ion etching;Infrared Physics & Technology;2015-11
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