Determination of the migration energy of Hg interstitials in (HgCd)Te from ion milling experiments
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Type conversion in CdxHg1-xTe by ion beam treatment
2. Ion beam milling effect on electrical properties of Hg1−xCdxTe
3. Ion mill damage in n-HgCdTe
4. Deep p-n junction in Hg1-xCdxTe created by ion milling
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1. HgCdTe Device Technology;Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors;2023
2. Reconversion of the CdHgTe conductivity type after plasma etching process at low temperature;Applied Physics Letters;2020-02-24
3. Обратная конверсия типа проводимости HgCdTe после плазмохимического травления при низких температурах / Горшков Д.В., Варавин В.С., Сидоров Г.Ю., Ремесник В.Г., Сабинина И.В.;Тезисы докладов XIV РОССИЙСКОЙ КОНФЕРЕНЦИИ ПО ФИЗИКЕ ПОЛУПРОВОДНИКОВ «ПОЛУПРОВОДНИКИ-2019»;2019-08-20
4. A review on plasma-etch-process induced damage of HgCdTe;Infrared Physics & Technology;2018-05
5. Inductively Coupled Plasma-Induced Electrical Damage on HgCdTe Etched Surface at Cryogenic Temperatures;Journal of Electronic Materials;2018-03-12
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