Deep p-n junction in Hg1-xCdxTe created by ion milling-Reference-Cited by-同舟云学术

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Deep p-n junction in Hg1-xCdxTe created by ion milling

Published:1993-09-01 Issue:9 Volume:8 Page:1695-1699
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Belas E,Hoschl P,Grill R,Franc J,Moravec P,Lischka K,Sitter H,Toth A

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/8/i=9/a=003/pdf

Reference13 articles.

1. Type conversion in CdxHg1-xTe by ion beam treatment

2. Ion beam milling effect on electrical properties of Hg1−xCdxTe

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