Organometallic vapor phase epitaxial growth and characterization of GaInP/AlInP quantum wells on 10°‐off GaAs substrates using ethyldimethylindium
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106504
Reference11 articles.
1. Highly reliable InGaP/InGaAlP visible light emitting inner stripe lasers with 667 nm lasing wavelength
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3. Lasing wavelengths of index-guided AlGaInP semiconductor lasers as functions of off-angle from (100) plane of GaAs substrate
4. Dependence of photoluminescence peak energy of MOVPE-grown AlGaInP on substrate orientation
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