Ledge growth, strain accommodation, and stacking fault formation during silicon oxidation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334033
Reference18 articles.
1. Viscous Shear Flow Model for MOS Device Radiation Sensitivity
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4. On the Kinetics of the Thermal Oxidation of Silicon: II . Some Theoretical Evaluations
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2. On the Origins of Oxidation‐Induced Stacking Faults in Silicon;Journal of The Electrochemical Society;1999-02-01
3. J.P. Hirth: the rest of the story;Scripta Materialia;1998-08
4. Role of interface structure and interfacial defects in oxide scale growth;Oxidation of Metals;1995-08
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