Coupled mechanical-oxidation modeling during silicon thermal oxidation process
Author:
Affiliation:
1. Key Laboratory of Pressurized System and Safety, East China University of Science and Technology, Shanghai, 200237, P.R. China
Funder
Special Program for Key Basic Research of Science and Technology Commission of Shanghai Municipality
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/9/1.4930255.pdf?itemId=/content/aip/journal/adva/5/9/10.1063/1.4930255&mimeType=pdf&containerItemId=content/aip/journal/adva
Reference42 articles.
1. General Relationship for the Thermal Oxidation of Silicon
2. Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix
3. Optimization of oxidation processes to improve crystalline silicon solar cell emitters
4. Metastable ultrathin crystal in thermally grown SiO2 film on Si substrate
5. Titanium catalyzed silicon nanowires and nanoplatelets
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2. Effect of interface reaction and diffusion on stress-oxidation coupling at high temperature;Journal of Applied Physics;2018-04-21
3. Thermal oxidation of Ti-6Al–4V alloy and pure titanium under external bending strain: Experiment and modelling;Corrosion Science;2017-07
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