On the Origins of Oxidation‐Induced Stacking Faults in Silicon-Reference-Cited by-同舟云学术

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On the Origins of Oxidation‐Induced Stacking Faults in Silicon

Published:1999-02-01 Issue:2 Volume:146 Page:741-743
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Monson T. K.¹,Van Vechten J. A.²

Affiliation:

1. Columbia American Plating Company, Portland, Oregon 97210, United States of America

2. Center for Advanced Materials Research, Department of Electrical and Computer Engineering, Oregon State University, Corvallis, Oregon 97331-3211, United States of America

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1391673/pdf

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Si (001) surface defects after extended high temperature annealing;Materials Science and Engineering: B;2000-02

2. Core structures and mechanical effects of extended defects specific to semiconductors;Extended Defects in Semiconductors

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