Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1383575
Reference13 articles.
1. Single transverse mode operation of long wavelength (~1.3 [micro sign]m) InAs GaAs quantum dot laser
2. Gain characteristics of InAs/GaAs self-organized quantum-dot lasers
3. Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser
4. Optical characteristics of 1.24-μm InAs quantum-dot laser diodes
5. Spectral analysis of InGaAs/GaAs quantum-dot lasers
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2. Transverse mode switching in quantum well-dot lasers triggered by gain saturation;Journal of Physics: Conference Series;2019-12-01
3. Ex-Situ Thermal Treatment Effects on the Temperature Dependent Carriers Dynamics in InAs/InGaAs/GaAs Quantum Dots;Crystals;2018-04-28
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