An envelope function description of the quantum well formed in strained layer SiGe/Si modulation doped field effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354771
Reference7 articles.
1. Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy
2. Numerical simulation and comparison of Si BJTs and Si/sub 1-x/Ge/sub x/ HBTs
3. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
4. The n-channel SiGe/Si modulation-doped field-effect transistor
5. High-transconductance n-type Si/SiGe modulation-doped field-effect transistors
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Device parameter optimization of strained Si channel SiGe/Si n-MODFET's using a one-dimensional charge control model;IEEE Transactions on Electron Devices;1998
2. Noise performance of Si/Si/sub 1-x/Ge/sub x/ FETs;IEEE Transactions on Electron Devices;1995
3. An analytical model of current-voltage characteristics and d.c. small-signal parameters for Si/Si1−xGex FETs;Solid-State Electronics;1994-08
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