Device parameter optimization of strained Si channel SiGe/Si n-MODFET's using a one-dimensional charge control model-Reference-Cited by-同舟云学术

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Device parameter optimization of strained Si channel SiGe/Si n-MODFET's using a one-dimensional charge control model

Published:1998 Issue:12 Volume:45 Page:2430-2436
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Halkias G.,Vegiri A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx4/16/15827/00735719.pdf?arnumber=735719

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. C–V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures;Applied Surface Science;2008-07

2. Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs;Microelectronics Reliability;2004-07

3. Noise in Si/SiGe and Ge/SiGe MODFET;SPIE Proceedings;2004-05-25

4. SiGe Hetero FETs on silicon at cryogenic temperature;Journal de Physique IV (Proceedings);2002-05

5. Low temperature analysis of 0.25 μm T-gate strained Si/Si/sub 0.55/Ge/sub 0.45/ n-MODFET's;IEEE Transactions on Electron Devices;2000-07

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