Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs-Reference-Cited by-同舟云学术

Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs

Published:2004-07 Issue:7 Volume:44 Page:1101-1107
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Yang L,Asenov A,Watling J.R,Boriçi M,Barker J.R,Roy S,Elgaid K,Thayne I,Hackbarth T

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

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2. DC and high frequency performance of 0.1 μm n-type Si/Si0.6Ge0.4 MODFET with fMAX=188 GHz at 300 K and fMAX=230 GHz at 50 K;EncisoAuilar;Electron Lett.,2003

3. Device linearity comparisons between doped-channel and modulation-doped designs in pseudomorphic Al0.3Ga0.7As/In0.2Ga0.8As heterostructure;Yang;IEEE Trans. Electron Dev.,1996

4. Yang L, Watling JR, Wilkins RCW, Asenov A, Barker JR, Hackbarth T. Scaling study of Si/SiGe MODFETs for RF applications. In: Proc EDMO'02; 2002. p. 106–9

5. MEDICI 2002.2, Synopsys Inc.; 2002

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