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High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET

  • Published:2003-02 Issue:2 Volume:47 Page:283-289
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Aniel F,Enciso-Aguilar M,Giguerre L,Crozat P,Adde R,Mack T,Seiler U,Hackbarth Th,Herzog H.J,König U,Raynor B

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radio Frequency Magnetron-Sputtered Germanium Nanoislands;21st Century Nanoscience – A Handbook;2019-11-26

2. Room-Temperature Terahertz Detection and Imaging by Using Strained-Silicon MODFETs;Design, Simulation and Construction of Field Effect Transistors;2018-07-18

3. TCAD study of sub-THz photovoltaic response of strained-Si MODFET;Journal of Physics: Conference Series;2015-10-13

4. Optimization of THz response of strained-Si MODFETs;physica status solidi (c);2015-08-31

5. Modulation-Doped Field-Effect Transistors (MODFET);Wiley Encyclopedia of Electrical and Electronics Engineering;2015-01-19
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