Built-in electric fields and valence band offsets in InN/GaN(0001) superlattices: First-principles investigations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3573499
Reference33 articles.
1. When group-III nitrides go infrared: New properties and perspectives
2. Polarization Effects in Semiconductors
3. Cross-sectional scanning photoelectron microscopy and spectroscopy of wurtzite InN∕GaN heterojunction: Measurement of “intrinsic” band lineup
4. Continuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric field
5. Optical properties of InGaN quantum wells
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