A near‐field scanning optical microscopy study of the photoluminescence from GaN films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.117231
Reference18 articles.
1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Microstructure of GaN epitaxy on SiC using AlN buffer layers
4. Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy
5. Spatial distribution of the luminescence in GaN thin films
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3. Nanoscale Characterization of V-defect in InGaN/GaN QWs LEDs using Near-Field Scanning Optical Microscopy;Nanomaterials;2019-04-18
4. The light–matter interaction of a single semiconducting AlGaN nanowire and noble metal Au nanoparticles in the sub-diffraction limit;Physical Chemistry Chemical Physics;2016
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