Terahetz detection by heterostructed InAs/InSb nanowire based field effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4757005
Reference15 articles.
1. Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors
2. Semiconductor nanowires for highly sensitive, room-temperature detection of terahertz quantum cascade laser emission
3. InAs/InP/InSb Nanowires as Low Capacitancen−nHeterojunction Diodes
4. Temperature dependent properties of InSb and InAs nanowire field-effect transistors
5. Band parameters for III–V compound semiconductors and their alloys
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