Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors-Reference-Cited by-同舟云学术

Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors

Published:2011-12-12 Issue:1 Volume:12 Page:96-101
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Vitiello Miriam S.¹²,Coquillat Dominique³,Viti Leonardo²,Ercolani Daniele²,Teppe Frederic³,Pitanti Alessandro²,Beltram Fabio²,Sorba Lucia²,Knap Wojciech³,Tredicucci Alessandro²

Affiliation:

1. Istituto di Fisica Applicata Nello Carrara − CNR, Via Madonna del Piano 1, Sesto Fiorentino, I-50019 Italy

2. NEST, Istituto Nanoscienze − CNR and Scuola Normale Superiore, Piazza San Silvestro 12, Pisa, I-56127 Italy

3. Université Montpellier 2 and CNRS, TERALAB-GIS, L2C UMR 5221, 34095 Montpellier, France

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl2030486

Reference30 articles.

1. Nanowire electronic and optoelectronic devices

2. Growth of nanowire superlattice structures for nanoscale photonics and electronics

3. Epitaxial core–shell and core–multishell nanowire heterostructures

4. Synthesis of branched 'nanotrees' by controlled seeding of multiple branching events

5. THz detectors

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