Epitaxial growth and characterization of thick multi-layer 4H-SiC for very high-voltage insulated gate bipolar transistors-Reference-Cited by-同舟云学术

Epitaxial growth and characterization of thick multi-layer 4H-SiC for very high-voltage insulated gate bipolar transistors

Published:2015-08-28 Issue:8 Volume:118 Page:085702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Miyazawa Tetsuya¹,Nakayama Koji²,Tanaka Atsushi²,Asano Katsunori²,Ji Shi-yang³^ORCID,Kojima Kazutoshi³,Ishida Yuuki³,Tsuchida Hidekazu¹

Affiliation:

1. Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan

2. Power Engineering R&D Center, Kansai Electric Power Co., Inc., 3-11-20 Nakoji, Amagasaki, Hyogo 661-0974, Japan

3. National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4929456

Reference42 articles.

1. Y. Sugawara , D. Takayama , K. Asano , R. Singh , J. Palmour , and T. Hayashi , inProceeding of International Symposium on Power Semiconductor Devices & ICs (ISPSD), Osaka, Japan (2001), p. 27.

2. Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode

3. Development of High-Voltage 4H-SiC PiN Diodes on 4° and 8° Off-Axis Substrates

4. 21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension

5. 21-kV SiC BJTs With Space-Modulated Junction Termination Extension

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