Unified compact theory of tunneling gate current in metal–oxide–semiconductor structures: Quantum and image force barrier lowering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1504173
Reference18 articles.
1. Corrected Values of Fowler-Nordheim Field Emission Functionsv(y)ands(y)
2. Fowler‐Nordheim Tunneling into Thermally Grown SiO2
3. Modeling and simulation of tunneling through ultra-thin gate dielectrics
4. Emission probability of hot electrons from silicon into silicon dioxide
5. Lucky-electron model of channel hot-electron injection in MOSFET'S
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2. Analytical model of gate leakage current through bilayer oxide stack in advanced MOSFET;Superlattices and Microstructures;2015-04
3. Optimization of Tunneling Currents Through CNT and Si Nanocrystals Embedded Gate Oxide Metal-Oxide-Semiconductor Structure Using Genetic Algorithm Approach for Memory Device Application;Journal of Computational and Theoretical Nanoscience;2012-03-01
4. A model for the high field leakage current in nitrided oxides;Journal of Applied Physics;2007-05-15
5. Tunneling current at the interface of silicon and silicon dioxide partly embedded with silicon nanocrystals in metal oxide semiconductor structures;Journal of Applied Physics;2007-01-15
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