Modeling and simulation of tunneling through ultra-thin gate dielectrics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365364
Reference46 articles.
1. Mechanism for stress‐induced leakage currents in thin silicon dioxide films
2. Generation and relaxation phenomena of positive charge and interface trap in a metal‐oxide‐semiconductor structure
3. Electron barrier height change and its influence on EEPROM cells
4. Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. Theory
5. Equilibrium‐to‐nonequilibrium transition in MOS (surface oxide) tunnel diode
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