Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond-Reference-Cited by-同舟云学术

Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond

Published:2014-12-08 Issue:23 Volume:105 Page:232106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ohtani Ryota¹,Yamamoto Takashi¹,Janssens Stoffel D.¹²,Yamasaki Satoshi³⁴,Koizumi Satoshi¹⁴

Affiliation:

1. National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

2. Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek, Belgium

3. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

4. Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), c/o AIST, Tsukuba, Ibaraki 305-8568, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4903779

Reference23 articles.

1. Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films

2. Phosphorus-doped chemical vapor deposition of diamond

3. n-type doping of (001)-oriented single-crystalline diamond by phosphorus

4. Lightly phosphorus-doped homoepitaxial diamond films grown by chemical vapor deposition

5. Characterization of n-Type Doped Homoepitaxial Diamond Thin Films

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