Influence of growth interruption on inverted interface quality in single AlAs‐GaAs quantum wells grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346970
Reference16 articles.
1. Dynamics of film growth of GaAs by MBE from Rheed observations
2. Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanisms
3. Role of surface kinetics and interrupted growth during molecular beam epitaxial growth of normal and inverted GaAs/AlGaAs(100) interfaces: A reflection high‐energy electron diffraction intensity dynamics study
4. One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
5. Surface migration study of atoms and formation of truly-smooth top and bottom heterointerfaces in GaAsAlAs quantum wells by temperature-switched technique in molecular beam epitaxy
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1. Signature of monolayer and bilayer fluctuations in the width of (Al,Ga)N/GaN quantum wells;Physical Review B;2009-01-30
2. Epitaxial film growth and characterization;Thin Films;2001
3. Exciton localization and interface roughness in growth-interrupted GaAs/AlAs quantum wells;Physical Review B;2000-04-15
4. Optical characterization of GaAs/AlAs multiple quantum wells interfaces;Radiation Effects and Defects in Solids;1998-10
5. Electron distribution and capacitance–voltage characteristics of n-doped quantum wells;Journal of Applied Physics;1998-09
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