Electron distribution and capacitance–voltage characteristics of n-doped quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368380
Reference26 articles.
1. Carrier profile evaluation for a Zn‐doped InGaAsP/InGaAsP multiquantum well using a low‐temperature capacitance‐voltage method
2. Determination of carrier and impurity profiles in doped n-type quantum well structures
3. Carrier profile for In0.35Ga0.65As/GaAs multiquantum well lasers from capacitance–voltage measurements
4. Measurement of isotype heterojunction barriers byC‐Vprofiling
5. Measurement of band offset of a strained‐layer single quantum well by a capacitance‐voltage technique
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