The effect of a ferromagnetic Gd marker on the effective work function of Fe in contact with Al2O3/Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3672398
Reference9 articles.
1. Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor
2. Electrical creation of spin polarization in silicon at room temperature
3. Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets
4. Measurements of metal gate effective work function by x-ray photoelectron spectroscopy
5. Development of a parallel-plate avalanche counter to perform conversion electron Mössbauer spectroscopy at low temperatures
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1. Understanding the role of buried interface charges in a metal-oxide-semiconductor stack of Ti/Al2O3/Si using hard x-ray photoelectron spectroscopy;Applied Physics Letters;2015-04-27
2. Interaction of Oxygen and Gadolinium with Si(100)-2x1 Surface. Formation of a System with 1-eV Work Function;Ukrainian Journal of Physics;2015-02
3. Spin and surface orientation effects of work function for Cr/Ni(111), Cr/Ni(100) and Cr/Ni(110) metal gates;International Journal of Modern Physics B;2014-08-05
4. Effect of Gd doping on the magnetism and work function of Fe 1— x Gd x /Fe (001);Chinese Physics B;2014-05
5. Silicon spintronics with ferromagnetic tunnel devices;Semiconductor Science and Technology;2012-07-03
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