Diffusion of manganese in GaAs and its effect on layer disordering in AlxGa1−xAs‐GaAs superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105510
Reference9 articles.
1. A study of p-type dopants for InP grown by adduct MOVPE
2. Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs
3. Diffusion of manganese into gallium arsenide
4. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
5. Enhanced/suppressed interdiffusion of InGaAs-GaAs-AlGaAs strained layers by controlling impurities and gallium vacancies
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1. Heusler interfaces—Opportunities beyond spintronics?;APL Materials;2019-08
2. The effect of a material growth technique on ion-implanted Mn diffusion in GaAs;Semiconductor Science and Technology;2009-03-06
3. Diffusion of Mn in gallium arsenide;Journal of Alloys and Compounds;2006-10
4. The effects of As overpressure and diffusion source on the diffusion of Mn in GaAs;Journal of Applied Physics;1992-12-15
5. Effect of as Overpressure on Mn-Induced Layer Disordering in AlGaAs-GaAs Superlattices: An Investigation of the Mn Diffusion Mechanism;MRS Proceedings;1992
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