The effects of As overpressure and diffusion source on the diffusion of Mn in GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351964
Reference23 articles.
1. The effect of arsenic pressure on impurity diffusion in gallium arsenide
2. The diffusion of silicon in gallium arsenide
3. Effect of surface encapsulation and As4 overpressure on Si diffusion and impurity-induced layer disordering in GaAs, AlxGa1-xAs, and AlxGa1-xAs-GaAs quantum well heterostructures
4. Diffusion of zinc in gallium arsenide under excess arsenic pressure
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1. The effect of a material growth technique on ion-implanted Mn diffusion in GaAs;Semiconductor Science and Technology;2009-03-06
2. Diffusion of Mn in gallium arsenide;Journal of Alloys and Compounds;2006-10
3. Spin spectroscopy of Mn-acceptor complex in GaMnAs;Quantum Sensing and Nanophotonic Devices;2004-07-06
4. Investigation of magnetic properties in Mn incorporated InSb, InP, and GaAs, synthesized through controlled-ambient annealing;MRS Proceedings;2004
5. Partial Pressure of Phosphorus and Arsenic Vapor Measured by Raman Scattering;Japanese Journal of Applied Physics;1999-02-28
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