Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection
Author:
Affiliation:
1. Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
2. Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
Funder
US Department of Homeland Security, Domestic Nuclear Detection Office
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4962831
Reference26 articles.
1. Epitaxial CVD growth of sp2-hybridized boron nitride using aluminum nitride as buffer layer
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4. Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure
5. Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates
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