Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material-Reference-Cited by-同舟云学术

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Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material

Published:2011-05-23 Issue:21 Volume:98 Page:211110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dahal R.,Li J.,Majety S.,Pantha B. N.,Cao X. K.,Lin J. Y.,Jiang H. X.

Funder

Defense Advanced Research Projects Agency

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3593958

Reference19 articles.

1. Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure

2. Electron field emission from boron-nitride nanofilms

3. The two-dimensional phase of boron nitride: Few-atomic-layer sheets and suspended membranes

4. Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers

5. Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride

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