Epitaxial CVD growth of sp2-hybridized boron nitride using aluminum nitride as buffer layer-Reference-Cited by-同舟云学术

Epitaxial CVD growth of sp2-hybridized boron nitride using aluminum nitride as buffer layer

Published:2011-10-10 Issue:10-11 Volume:5 Page:397-399
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Chubarov Mikhail,Pedersen Henrik,Högberg Hans,Darakchieva Vanya,Jensen Jens,Persson Per O. Å.,Henry Anne

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Luminescence properties of hexagonal boron nitride: Cathodoluminescence and photoluminescence spectroscopy measurements

2. Hexagonal boron nitride on Ni (111) substrate grown by flow-rate modulation epitaxy

3. Growth of oriented BN films prepared by electron cyclotron resonance CVD

4. Joint Committee on Powder Diffraction Standards, JCPDS, Swarthmore, PA, pattern 34-0421, pattern 45-1171, pattern 83-2080, pattern 75-1541, pattern 25-1133.

5. Synthesis of highly crystalline rhombohedral BN triangular nanoplates via a convenient solid state reaction

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