Defects in layered boron nitride grown by Metal Organic Vapor Phase Epitaxy: luminescence and positron annihilation studies-Reference-Cited by-同舟云学术

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Defects in layered boron nitride grown by Metal Organic Vapor Phase Epitaxy: luminescence and positron annihilation studies

Published:2024-05 Issue: Volume:269 Page:120486
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Dąbrowska Aleksandra K.^ORCID,Binder Johannes^ORCID,Prozheev Igor^ORCID,Tuomisto Filip^ORCID,Iwański Jakub^ORCID,Tokarczyk Mateusz^ORCID,Korona Krzysztof P.^ORCID,Kowalski Grzegorz,Stępniewski Roman^ORCID,Wysmołek Andrzej^ORCID

Funder

Narodowe Centrum Nauki

Publisher

Elsevier BV

Reference77 articles.

1. An X-ray study of boron nitride;Pease;Acta Crystallogr.,1952

2. Polytypes of sp2-Bonded boron nitride;Gil;Crystals,2022

3. Review Article: challenge in determining the crystal structure of epitaxial 0001 oriented sp2-BN films;Chubarov;J. Vac. Sci. Technol. A,2018

4. Epitaxial CVD growth of sp2-hybridized boron nitride using aluminum nitride as buffer layer;Chubarov;Phys. Status Solidi RRL,2011

5. Two stage epitaxial growth of wafer-size multilayer h-BN by metal-organic vapor phase epitaxy – a homoepitaxial approach;Dabrowska;2D Mater.,2021

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Large-Area Growth of High-Optical-Quality MoSe₂/hBN Heterostructures with Tunable Charge Carrier Concentration;ACS Applied Materials & Interfaces;2024-09-06

2. Manipulating carbon related spin defects in boron nitride by changing the MOCVD growth temperature;Diamond and Related Materials;2024-08

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