Size dictated thermal conductivity of GaN-Reference-Cited by-同舟云学术

Size dictated thermal conductivity of GaN

Published:2016-09-02 Issue:9 Volume:120 Page:095104
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Beechem Thomas E.¹,McDonald Anthony E.¹^ORCID,Fuller Elliot J.²,Talin A. Alec²,Rost Christina M.³,Maria Jon-Paul³,Gaskins John T.⁴,Hopkins Patrick E.⁴,Allerman Andrew A.¹

Affiliation:

1. Sandia National Laboratories, Albuquerque, New Mexico 87123, USA

2. Sandia National Laboratories, Livermore, California 94551, USA

3. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA

4. Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA

Funder

National Science Foundation (NSF)

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4962010

Reference67 articles.

1. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

2. GaN HEMT: Dominant Force in High-Frequency Solid-State Power Amplifiers

3. Power electronics with wide bandgap materials: Toward greener, more efficient technologies

4. Thermal effects in packaging high power light emitting diode arrays

5. GaN HEMT thermal behavior and implications for reliability testing and analysis

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