Improved optical response of superlattice graded InAlAs/InGaAs p-i-n photodetectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122757
Reference11 articles.
1. Resonant‐cavity InGaAlAs/InGaAs/InAlAs phototransistors with high gain for 1.3–1.6 μm
2. Improved performance of InAlAs-InGaAs-InP MSM photodetectors with graded superlattice structure grown by gas source MBE
3. Very high speed GaInAs metal‐semiconductor‐metal photodiode incorporating an AlInAs/GaInAs graded superlattice
4. Resonant-cavity-enhanced avalanche photodiodes grown by molecular beam epitaxy on InP for detection near 1.55 μm
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1. Frequency Response of Barrier Type 2.6 µm In0.83 Ga0.17 As/In0.83 Al0.17 As Photodetectors on InP;physica status solidi (a);2018-09-17
2. Epitaxy and Device Properties of InGaAs Photodetectors with Relatively High Lattice Mismatch;Epitaxy;2018-03-07
3. GaAs-based In0.83Ga0.17As photodetector structure grown by gas source molecular beam epitaxy;Journal of Crystal Growth;2014-05
4. High direct energy band gaps determination in In[sub x]Al[sub 1−x]As coherently grown on InP;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
5. Photovoltaic effects on pinch-off voltage and open-circuit voltage in high-electron-mobility-transistor and Schottky-diode configurations;Applied Physics Letters;2001-03-12
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