Interactions between interstitial atoms in silicon: Arsenic‐argon‐boron and boron‐argon‐phosphorus
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340003
Reference8 articles.
1. Interference of arsenic diffusion by argon implantation
2. Suppression of the lateral diffusion under the gate of an MOS transistor by argon implantation
3. Effect of argon implantation on the activation of boron implanted in silicon
4. Epitaxial regrowth of silicon implanted with argon and boron
5. Quantum‐chemical modeling of boron and noble gas dopants in silicon
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Recombination Centers Created by Ar + ‐Ion Implantation into SIMOX Substrates;Journal of The Electrochemical Society;1998-05-01
2. P‐type Dopant Diffusion Control in Silicon Using Germanium;Journal of The Electrochemical Society;1991-06-01
3. Dopant diffusion in silicon in the presence of other dopants: A new predictive approach based on modeling boron and phosphorous diffusion in germanium‐rich regions of silicon;Journal of Applied Physics;1991-04
4. Dopant diffusion control in silicon using germanium;Journal of Applied Physics;1990-10
5. Damage Freeze-In Phenomena as a Function of Dopant Implant Type In Germanium-Rich Regions in Silicon;MRS Proceedings;1990
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