Dopant diffusion in silicon in the presence of other dopants: A new predictive approach based on modeling boron and phosphorous diffusion in germanium‐rich regions of silicon-Reference-Cited by-同舟云学术

Dopant diffusion in silicon in the presence of other dopants: A new predictive approach based on modeling boron and phosphorous diffusion in germanium‐rich regions of silicon

Published:1991-04 Issue:7 Volume:69 Page:3901-3906
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Aronowitz Sheldon

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.348448

Reference11 articles.

1. Dopant diffusion control in silicon using germanium

2. Quantum‐chemical modeling of boron and noble gas dopants in silicon

3. Interstitial Interactions: Arsenic‐Aluminum, Phosphorus‐Aluminum Push Effect

4. Interstitial interactions: Aluminum‐boron, aluminum‐gallium, and boron‐gallium pull effect

5. Interactions between interstitial atoms in silicon: Arsenic‐argon‐boron and boron‐argon‐phosphorus

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