Influence of composition pulling effect on the two-dimensional electron gas formed at AlyInxGa1−x−yN∕GaN interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2132090
Reference30 articles.
1. Spatially resolved luminescence studies of defects and stress in aluminum gallium nitride films
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5. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
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1. Temperature dependent analytical model for transfer characteristics of GaN HEMTs with AlxInyGazN barrier layer;Materials Today: Proceedings;2022
2. Effect of various Fe-doped AlGaN buffer layer of AlGaN/GaN HEMTs on Si substrate;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-07
3. Use of a bilayer lattice-matched AlInGaN barrier for improving the channel carrier confinement of enhancement-mode AlInGaN/GaN hetero-structure field-effect transistors;Journal of Applied Physics;2017-06-28
4. Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction;Scientific Reports;2016-06
5. Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system;Scientific Reports;2016-04-26
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